TIP33CTIP34CComplementary power transistors .Features Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagramsTable 1.

TIP33CTIP34CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3The TIP33C is a silicon Epitaxial-Base NPN2power transistor mounted in TO-218 plastic1package. It is intented for use in linear andswitching applications.TO-218The complementary PNP t

SEMICONDUCTOR TIP34CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to TIP33C.Recommended for 45W 50W Audio Frequency DIM MILLIMETERSA 15.9 MAXAmplifier Output Stage.B 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0G 3.3 MAXdMAXIMUM RATING (Ta=25 )H 9.0I 4.5CHARACTERISTIC SY

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP34/34A/34B/34C DESCRIPTION With TO-3PN package Complement to type TIP33/33A/33B/33C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base