Биполярный транзистор TIP35AF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP35AF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 25 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO-3P
TIP35AF Datasheet (PDF)
tip35af.pdf
isc Silicon NPN Power Transistor TIP35AFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
tip35are.pdf
Order this documentMOTOROLAby TIP35A/DSEMICONDUCTOR TECHNICAL DATANPNTIP35AComplementary SiliconTIP35B*High-Power Transistors. . . for generalpurpose power amplifier and switching applications.TIP35C* 25 A Collector CurrentPNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 VTIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw
tip35a tip35b tip35c tip36a tip36b tip36c.pdf
TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain
tip35 tip35a tip35b tip35c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
tip35ab.pdf
isc Silicon NPN Power Transistor TIP35ABDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
tip35at.pdf
isc Silicon NPN Power Transistor TIP35ATDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050