TIP35AF - параметры, поиск аналогов, даташиты транзистора

TIP35AF Datasheet (PDF)

..1. Size:222K inchange semiconductor
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isc Silicon NPN Power Transistor TIP35AFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

8.1. Size:157K motorola
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Order this documentMOTOROLAby TIP35A/DSEMICONDUCTOR TECHNICAL DATANPNTIP35AComplementary SiliconTIP35B*High-Power Transistors. . . for generalpurpose power amplifier and switching applications.TIP35C* 25 A Collector CurrentPNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 VTIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

8.2. Size:260K onsemi
tip35a tip35b tip35c tip36a tip36b tip36c.pdf pdf_icon

TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

8.3. Size:160K inchange semiconductor
tip35 tip35a tip35b tip35c.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base