Биполярный транзистор 2SC5763 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5763
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 55 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 17 MHz
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO-220
2SC5763 Datasheet (PDF)
2sc5763.pdf
Ordering number : ENN6989A2SC5763NPN Triple Diffused Planar Silicon Transistor2SC5763Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching.[2SC5763] Wide ASO.10.24.5 Adoption of MBIT process. 3.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSANY
2sc5763.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5763DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA
2sc5765.pdf
2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Ba
2sc5764.pdf
Ordering number : ENN6971A2SC5764NPN Triple Diffused Planar Silicon Transistor2SC5764Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching.[2SC5764] Wide ASO.4.510.02.8 Adoption of MBIT process.3.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector
2sc5761.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5761NPN SiGe RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for low noise high-gain amplificationNF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5765.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
2sc5764.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050