2SC4411. Аналоги и основные параметры
Наименование производителя: 2SC4411
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1200 MHz
Ёмкость коллекторного перехода (Cc): 4.4 pf
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO-220AB
SC-46
Аналоги (замена) для 2SC4411
- подборⓘ биполярного транзистора по параметрам
2SC4411 даташит
8.1. Size:90K sanyo
2sc4413.pdf 
Ordering number EN2923 NPN Epitaxial Planar Silicon Transistor 2SC4413 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SC4413- unit mm applied sets to be made small and slim. 2059B Adoption of FBET process. [2SC4413] High DC current gain. 0.3 0.15 Low collector-to-emitter saturation voltage.
8.2. Size:24K sanyo
2sc4412.pdf 
Ordering number ENN3019B 2SC4412 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions High breakdown voltage(VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2018B frequency characteristic(Cre 1.0pF typ). [2SC4412] Excellent DC current gain ratio(hFE rati
8.3. Size:137K sanyo
2sa1683 2sc4414.pdf 
Ordering number EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO>80V. 2033 [2SA1683/2SC4414] B Base C Collector E Emitter ( ) 2SA1683 SANYO SPA Specifications Absolute
8.4. Size:37K panasonic
2sc4410.pdf 
Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25 C
8.5. Size:36K panasonic
2sc4417.pdf 
Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 pa
8.6. Size:40K panasonic
2sc4417 e.pdf 
Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 pa
8.7. Size:41K panasonic
2sc4410 e.pdf 
Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25 C
8.9. Size:56K hitachi
2sc4416.pdf 
2SC4416 Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier Outline MPAK 3 1 1. Base 2. Emitter 2 3. Collector 2SC4416 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 15
8.10. Size:25K sanken-ele
2sc4418.pdf 
2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4418 Unit Symbol Conditions 2SC4418 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V ICBO VCB=500V 100max A
8.11. Size:769K kexin
2sc4416.pdf 
SMD Type Transistors NPN Transistors 2SC4416 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=13V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto
8.12. Size:726K kexin
2sc4412.pdf 
SMD Type Transistors NPN Transistors 2SC4412 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=300V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Col
8.13. Size:214K inchange semiconductor
2sc4419.pdf 
isc Silicon NPN Power Transistor 2SC4419 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
Другие транзисторы: 2SC3271F, 2SC3802K, 2SC3839K, 2SC4115S, 2SC4184, 2SC4225, 2SC4227, 2SC4228, BD140, 2SC4457, 2SC4459, 2SC4461, 2SC4536, 2SC4547, 2SC4563, 2SC4568, 2SC4569
