2SC4461
- Даташиты. Аналоги. Основные параметры
Наименование производителя: 2SC4461
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 65
W
Макcимально допустимое напряжение коллектор-база (Ucb): 800
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 25
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 18
MHz
Ёмкость коллекторного перехода (Cc): 260
pf
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора:
TO-3PML
Аналоги (замена) для 2SC4461
2SC4461
Datasheet (PDF)
..1. Size:103K sanyo
2sc4461.pdf 

Ordering number EN3332 NPN Triple Diffused Planar Silicon Transistor 2SC4461 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4461] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base
..2. Size:225K inchange semiconductor
2sc4461.pdf 

isc Silicon NPN Power Transistor 2SC4461 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
8.1. Size:107K sanyo
2sc4460.pdf 

Ordering number EN3331 NPN Triple Diffused Planar Silicon Transistor 2SC4460 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4460] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base
8.2. Size:169K utc
2sc4467.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an
8.3. Size:122K utc
2sc4466.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable
8.4. Size:36K hitachi
2sc4462.pdf 

2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temper
8.5. Size:33K hitachi
2sc4463.pdf 

2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temper
8.6. Size:117K jmnic
2sc4460.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25 ) SYMB
8.7. Size:192K jmnic
2sc4467.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
8.8. Size:192K jmnic
2sc4468.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
8.9. Size:189K jmnic
2sc4466.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4466 DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.10. Size:24K sanken-ele
2sc4467.pdf 

2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit 0.2 4.8 0.4 15.6 0.1 VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0 IEBO VCEO 120 V VEB=6V 10max
8.11. Size:24K sanken-ele
2sc4468.pdf 

2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit 0.2 4.8 0.4 15.6 VCBO 200 V ICBO VCB=200V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB=6V 10max
8.12. Size:24K sanken-ele
2sc4466.pdf 

2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4466 Symbol Conditions 2SC4466 Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 120 ICBO VCB=120V 10max A 9.6 2.0 V VCEO 80 IEBO VEB=6V 10max A
8.13. Size:403K cn sptech
2sc4467o 2sc4467p 2sc4467y.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UN
8.14. Size:225K inchange semiconductor
2sc4460.pdf 

isc Silicon NPN Power Transistor 2SC4460 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
8.15. Size:194K inchange semiconductor
2sc4467.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4467 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1694 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MA
8.16. Size:156K inchange semiconductor
2sc4468.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDIT
8.17. Size:194K inchange semiconductor
2sc4466.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1693 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAX
Другие транзисторы... 2SC4115S
, 2SC4184
, 2SC4225
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, 2SC4228
, 2SC4411
, 2SC4457
, 2SC4459
, BC557
, 2SC4536
, 2SC4547
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, 2SC4568
, 2SC4569
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.
History: KRC825U
| ASY70VI
| ASY81
| KRC836U
| 2PA1576R
| UMA11N
| ASY85