2SC4613 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2SC4617/D Preliminary Information 2SC4617 NPN Silicon General Purpose Amplifier Transistor NPN GENERAL This NPN transistor is designed for general purpose amplifier applications. PURPOSE AMPLIFIER This device is housed in the SOT-416/SC 90 package which is designed for TRANSISTORS low power surface mount applications, wh

Ordering number EN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage and large current capacity. 2064 [2SA1770/2SC4614] E Emitter C Collector B Base ( ) 2SA1770 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C P

Ordering number EN3398A 2SA1772 PNP Epitaxial Planar Silicon Transistor 2SC4615 NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions Large current capacity (IC=1A). unit mm High breakdown votlage (VCEO 400V). 2045B [2SA1772/2SC4615] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP uni

Ordering number ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage and large current capacity. 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector ( ) 2SA1770 3 Base 2.54 2.54 Specificat

Ordering number EN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064 Features [2SA1768/2SC4612] Adoption of MBIT process. High breakdown voltage, large current capacity. Fast switching speed. E Emitter C Collector B Base

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector

2SC4618H / 2SC4618 / 2SC4098 / 2SC2413 / 2SC2058S Transistors High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC4618H / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Features 1) Low collector capacitance. (Cob Typ. 1.3pF) External dimensions (Units mm) 2) Low rbb, high gain, and excellent noise characteristics. 2SC4618H 1.6 0.85 (1) (2) (3) Absolute maximum ratings (Ta=2

AEC-Q101 Qualified General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC2412KFRA 2SC4081FRA 2. Complements the 2SA1037AK / 2SA1576A / 2SA1037AKFRA / 2SA1576AFRA 2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

2SC4618 Datasheet Datasheet High-Frequency Amplifer Transistor (25V, 50mA, 300MHz) lOutline l SOT-416 Parameter Value SC-75A VCEO 25V IC 50mA EMT3 lFeatures lInner circuit l l 1)Low collector capacitance. (Cob Typ.1.3pF) lApplication l HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR lPackaging specifi

AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17

MCC 2SC4617-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SC4617-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4617-S Fax (818) 701-4939 Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

MCC 2SC4617-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SC4617-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4617-S Fax (818) 701-4939 Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

MCC 2SC4617-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SC4617-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4617-S Fax (818) 701-4939 Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http //onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT Reduces

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http //onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT Reduces

2SC4617 NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http //onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE Features AMPLIFIER TRANSISTORS Pb-Free Package is Available* SUR

ON Semiconductort 2SC4617 NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier NPN GENERAL applications. This device is housed in the SOT-416/SC 90 package PURPOSE AMPLIFIER which is designed for low power surface mount applications, where TRANSISTORS board space is at a premium. SURFACE MOUNT Reduces Board Space H

Ordering number EN3578A 2SA1770/2SC4614 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single NMP Features Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V C

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ.) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel 2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 B E C Tape Reel

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel 2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 E B C Tape Reel

2SC460, 2SC461 Silicon NPN Epitaxial Planar Application 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC460 2SC461 Unit Collector to base voltage VCBO 30 30 V Collector to emitter voltage VCEO 30 30 V Emitter to base voltage VE

2SC4618 0.05A , 40V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Voltage and Current. High DC Current Gain. A Complementary to 2SC4738. M 3 3 Top View C B Application 1 1 2 General Purpose Amplification. L 2 K E D CLASSIFICATION OF hFE H

2SC4617 0.15A , 60V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES Low Cob. Cob=2.0pF Complement of 2SA1774 A M 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 K Product-Rank 2SC4617-Q 2SC4617-R 2SC4617-S E Range 120 270 180 390 270 560 D H J F G M

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SC4617 TRANSISTOR (NPN) FEATURES Low Cob Cob=2.0pF(Typ) 1. BASE Complement to 2SA1774 2. EMTTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Vol

2SC4617 SOT-523 Transistor(NPN) SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features Low Cob Cob=2.0pF(Typ) Complement to 2SA1774 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Con

2SC4618 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES Power dissipation PCM SOT-523(SC-75) Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range TJ, Tstg C ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) TYP MAX UNIT Parameter Symbol MIN Collector-base breakdown voltage IC =50 A,

2SC4617 NPN 3 3 1 2 SC-89 (SOT-523F) WEITRON http //www.weitron.com.tw 2SC4617 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 120 560 (IC=1 mAdc, VCE=6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - 0.5 (IC=50 mAdc, IB=5mAdc) Output Capacitance

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617QT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G B

SMD Type SMD Type SMD Type SMD Type SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SC4615 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Large current calcity (IC=1A) High blocking voltage(VCEO 400V) 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0

SMD Type Transistors NPN Transistors 2SC4618 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 High Voltage and Current High DC Current Gain 3 Small Package 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 4

SMD Type Transistors NPN Transistors 2SC4617 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V 3 Low Cob Cob=2.0pF(Typ) 0.3 0.05 Complement to 2SA1774 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25

SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4616 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Large current calcity (IC=2A) High blocking voltage(VCEO 400V) 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

Bruckewell Technology Corp., Ltd. General Purpose Transistors NPN Silicon 2SC4617XT1G We declare that the material of product compliance with RoHS requirements MECHANICAL DATA * Case SOT-523 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-523 Absolute maximum ratings (Ta=25 C) Device marking Bruckewell Technology Corp., Ltd. Electrical characteristics (T

CHENMKO ENTERPRISE CO.,LTD 2SC4617GP SURFACE MOUNT General Purpose NPN Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Power Amplifier . FEATURE SC-75/SOT-416 * Surface mount package. (SC-75/SOT-416) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Collector power dissipation). (2) (3) 1.5 1.7 CONSTRUCTION 0.5

2SC4617 NPN general purpose Transistor FEATURES Pb Reduces board space. Lead-free High hFE,210-460(typical). Low VCE(sat),

TAK CHEONG SEMICONDUCTOR 150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25 C unless otherwise noted 2 Symbol Parameter Value Units PC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto

2SC4617 2SC4617 2SC4617 2SC4617 TRANSISTOR(NPN) 2SC4617 SOT 523 FEATURES Low Cob Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150

2SC4617 2SC4617 SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Low Cob = 2.0pF (Typical) Low Vce(sat)

SOT-523 Plastic-Encapsulate Transistors SOT-523 2SC4617 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low Cob Cob=2.0pF(Typ) Complement to 2SA1774 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuo