2SC4624
- Даташиты. Аналоги. Основные параметры
Наименование производителя: 2SC4624
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 110
W
Макcимально допустимое напряжение коллектор-база (Ucb): 35
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 16
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2.5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 1000
MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: T-44E
Аналоги (замена) для 2SC4624
2SC4624
Datasheet (PDF)
8.1. Size:127K sanyo
2sc4623.pdf 

Ordering number EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 250V(min). 2042B High current. [2SA1777/2SC4623] Small reverse transfer capacitance and excellent high-frequnecy characteristic
8.5. Size:39K panasonic
2sc4627j e.pdf 

Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. (Flat type) +0.05 0.85 0.03 Absolute Maximum Rati
8.7. Size:60K panasonic
2sc4627 e.pdf 

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati
8.8. Size:57K panasonic
2sc4627.pdf 

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati
8.9. Size:23K hitachi
2sc4629.pdf 

2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junc
8.10. Size:29K hitachi
2sc4628.pdf 

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temp
8.11. Size:184K inchange semiconductor
2sc4622.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators Solid st
Другие транзисторы... 2SC4571
, 2SC4591
, 2SC4592
, 2SC4593
, 2SC4596E
, 2SC4603R
, 2SC4606
, 2SC4613
, 2SC4793
, 2SC4628
, 2SC4630LS
, 2SC4638
, 2SC4643
, 2SC4647
, 2SC4660
, 2SC4671
, 2SC4673
.
History: DRA9114E
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