2SC4782 - Даташиты. Аналоги. Основные параметры

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Max

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Max

SMD Type Transistors NPN Transistors 2SC4782 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C)

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C)

2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Colle

isc Product Specification isc Silicon NPN Power Transistor 2SC4789 DESCRIPTION Silicon NPN triple diffused High Switching Speed High Breakdown Voltage High speed switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deffection output Suitable for large size CRT