2SC4791 - Даташиты. Аналоги. Основные параметры

2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 TO-220F *Pb-free plating product number 2SC4793L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC4793-x-TF3-T 2SC4793L-x-TF3-T T

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings

NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO 2SA1837 Complementary to 2SA1937 High transition frequency fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d

RoHS RoHS 2SC4793AF SEMICONDUCTOR Nell High Power Products High Frequency NPN Power Transistor 1A/230V/20W FEATURES High transition frequency fT = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be B C E installed to the heat sink with one screw TO-220F APPLICATIONS (2SC4793AF) Power amplifier Driver stage amplifier (2) C B (1) NPN E(3) ABSOLUT

DIP Type Transistors Transistors NPN Transistors 2SC4793 Features TO-220MF Units mm High collector voltage VCEO=230V (min) Complementary to 2SA1837 High transition frequency fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230 V Collector - Emitter Voltage VCEO 230 Emitt

Silicon PNP transistor Power Amplifier Applications Complementary to 2SA1837 High collector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin

2SC4793 Minos Silicon NPNTriple diffusionType 2SC4793 Power Amplifier Applications Complementaryto 2SA1837 Highcollector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis product todecrease inthe reliability significantly even if the operating conditions

isc Silicon NPN Power Transistor 2SC4793 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SA1837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4799 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications AB

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4796 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI