Transistor2SC4835Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF.1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)0

Transistor2SC4835Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF.1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)0

2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4839 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

Ordering number:EN4134NPN Epitaxial Planar Silicon Transistor2SC483620V/5A Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2084BFeatures [2SC4836]4.5 Large allowable collector dissipation.1.9 2.610.51.2 1.4 Low saturation voltage. Large current capacity. Fast switching speed. Usa

Ordering number:EN4135PNP/NPN Epitaxial Planar Silicon Transistor2SA1855/2SC483750V/4A Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2084BFeatures [2SA1855/2SC4837] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4833 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 500 V VCEO Collector-

SHINDENGENSwitching Power TransistorFS SeriesOUTLINE DIMENSIONS2SC4834 Case : ITO-220Unit : mm(TP8V40FS)8A NPNRATINGS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4830DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4833DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4834DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXI