2SC4851 - Даташиты. Аналоги. Основные параметры

Ordering number EN4558 NPN Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits Features Package Dimensions Very small-sized package permitting 2SC4851- unit mm applied sets to be made smaller and slimer. 2059B Small output capacitance. [2SC4851] Low collector-to-emitter saturation voltage. 0.3 Small ON resistance. 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.

Ordering number ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features Low-voltage, low-current operation fT=5GHz typ. (VCE=1V, IC=1mA) S21e 2=7dB typ (f=1GHz). NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

Ordering number EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2018B NF=2.6dB typ (f=1GHz). [2SC4854] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitte

Ordering number EN4559 NPN Epitaxial Planar Silicon Transistor 2SC4852 Muting Circuits Features Package Dimensions Small-sized package permitting 2SC4852-applied unit mm sets to be made smaller and slimer. 2018B Small output capacitance. [2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base

Ordering number EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7.5dB typ 2110A (f=1GHz). [2SC4855] 1.9 NF=2.6dB typ (f=1GHz). 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85

Ordering number EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2059B NF=2.6dB typ (f=1GHz). [2SC4853] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base

Ordering number ENA1076A 2SC4853A RF Transistor http //onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features Low-voltage, low-current operation fT=5GHz typ (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz) 2 NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-

SMD Type Transistors NPN Transistors 2SC4854 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=6V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector

SMD Type Transistors NPN Transistors 2SC4852 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4850 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A