Биполярный транзистор 2SC4861 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4861
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 6500 MHz
Ёмкость коллекторного перехода (Cc): 0.65 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: CP
2SC4861 Datasheet (PDF)
2sc4861.pdf
Ordering number:EN4581NPN Epitaxial Planar Silicon Transistor2SC4861UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High cutoff frequency : fT=6.5GHz typ.unit:mm2 High gain : S21e =11.5dB typ (f=1GHz).2018B Small Cob : NF=0.65pF typ.[2SC4861]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO
2sc4861.pdf
SMD Type TransistorsNPN Transistors2SC4861SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc4867.pdf
Ordering number:EN4856NPN Epitaxial Planar Silicon Transistor2SC4867VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2059B High cutoff frequency : fT=9.0GHz typ.[2SC4867]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Em
2sc4864.pdf
Ordering number:EN4583NPN Epitaxial Planar Silicon Transistor2SC4864VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =11dB typ (f=1GHz).2018B High cutoff frequency : fT=7.0GHz typ.[2SC4864]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : C
2sc4863.pdf
Ordering number:EN4582NPN Epitaxial Planar Silicon Transistor2SC4863VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =11dB typ (f=1GHz).2059B High cutoff frequency : fT=7.0GHz typ.[2SC4863]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Em
2sc4868.pdf
Ordering number:EN5043NPN Epitaxial Planar Silicon Transistor2SC4868VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2018B High cutoff frequency : fT=9.0GHz typ.[2SC4868]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3
2sc4860.pdf
Ordering number:EN4580NPN Epitaxial Planar Silicon Transistor2SC4860UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High cutoff frequency : fT=6.5GHz typ.unit:mm2 High gain : S21e =11.5dB typ (f=1GHz).2059B Small Cob : NF=0.65pF typ.[2SC4860]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : Collect
2sc4869.pdf
Ordering number:EN5044NPN Epitaxial Planar Silicon Transistor2SC4869VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =15dB typ (f=1GHz).2110A High cutoff frequency : fT=9.0GHz typ.[2SC4869]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitter
2sc4865.pdf
Ordering number:EN4760NPN Epitaxial Planar Silicon Transistor2SC4865VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12.5dB typ (f=1GHz).2110A High cutoff frequency : fT=7.0GHz typ.[2SC4865]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitt
2sc4864.pdf
SMD Type TransistorsNPN Transistors2SC4864SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=8V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collecto
2sc4868.pdf
SMD Type TransistorsNPN Transistors2SC4868SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050