Биполярный транзистор 2SC4884
Даташит. Аналоги
Наименование производителя: 2SC4884
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 300
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 70
MHz
Ёмкость коллекторного перехода (Cc): 2.6
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: FLP
- подбор биполярного транзистора по параметрам
2SC4884
Datasheet (PDF)
..1. Size:106K sanyo
2sc4884.pdf 

Ordering number:EN4136NPN Epitaxial Planar Silicon Transistor2SC4884High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display.unit:mm Especially suited for use in color TV chrome output2084Band high breakdown voltage driver applications.[2SC4884]4.51.9 2.610.51.2 1.4Features Adoption of MBIT process
8.3. Size:82K nec
2sc4885.pdf 

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER MINI MOLDPACKAGE DIMENSIONS(Units: mm)FEATURES Excellent Low NF in Low Frequency Band 2.10.1 Low Voltage Use1.250.1 Low Cob : 0.9 pF TYP. Low Noise Voltage : 90 mV TYP.2 Super Mini Mold Package. EIAJ : SC-7031ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)Colle
8.4. Size:33K hitachi
2sc4880.pdf 

2SC4880Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High speed switchingtf 0.5 s High breakdown voltageVCBO = 1700 VOutlineTO-3PL1. Base 2. Collector 3. Emitter1232SC4880Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1700 VCollector to emitter vo
8.5. Size:25K sanken-ele
2sc4886.pdf 

LAPT 2SC4886Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4886 Symbol Conditions 2SC4886 UnitUnit 0.20.2 5.515.60.23.45VCBO 150 ICBO VCB=150V 100max AVVCEO 150 IEBO VEB=5V 100max AV
8.6. Size:23K sanken-ele
2sc4883.pdf 

2SC4883/4883ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsExternal Dimensions FM20(TO220F)Symbol 2SC4883 2SC4883AUnitSymbol Conditions 2SC4883 2SC4883A Unit0.24.20.210.1c0.52.8VCBO 150 180V 10max AI
8.7. Size:113K inchange semiconductor
2sc4883 2sc4883a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION With TO-220F package Complement to type 2SA1859/1859A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25
8.8. Size:181K inchange semiconductor
2sc4881.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4881DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation Voltage-: V = 0.4V(Max)@ (I = 2.5A, I = 125mA)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo
8.9. Size:188K inchange semiconductor
2sc4880.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4880DESCRIPTIONHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
8.10. Size:206K inchange semiconductor
2sc4883a.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SA1859A100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)
8.11. Size:196K inchange semiconductor
2sc4886.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4886DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1860100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
8.12. Size:206K inchange semiconductor
2sc4883.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1859100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Другие транзисторы... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SD2499
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
History: 2SC4959