2N6235 - описание и поиск аналогов

2N6235 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

isc Silicon NPN Power Transistor 2N6235 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 325V(Min) CEO(SUS) DC Current Gain- h = 25-125@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V )= 0.5V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f for high-voltage medium pow

2N6235X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6237/D 2N6237 thru Silicon Controlled Rectifiers 2N6241 Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as SCRs temperature, light, and speed control; process and remote control, and warning 4 AMPERES RMS systems where reliability of operation is important. 50 t

2N6230 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N6234 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol

TECHNICAL DATA SILICON NPN TRANSISTOR Devices 10 AMP 2N6232 100 V FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO Emitter-Base Voltage 7.0 Vdc VEBO Collector Current Peak (1) 10 Adc IC Base Current Continuous IB Adc Total Power Dissipation @

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3