Биполярный транзистор 2SC5291
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5291
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 180
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 120
MHz
Ёмкость коллекторного перехода (Cc): 14
pf
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: FLP
Аналоги (замена) для 2SC5291
2SC5291
Datasheet (PDF)
..1. Size:27K sanyo
2sc5291.pdf 
Ordering number : ENN5282A2SC5291NPN Epitaxial Planar Silicon Transistor2SC5291High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes. unit : mm Large current capacity. 2084B Can be provided in taping.[2SC5291] 9.5mm onboard mounting height.4.51.9 2.610.51.2 1.41.20.51.60.51 2 31 : Emitter2 : Collecto
8.1. Size:94K sanyo
2sc5299.pdf 
Ordering number:EN5293NPN Triple Diffused Planar Silicon Transistor2SC5299Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5299] Adoption of MBIT process.16.05.63.43.12.82.0
8.2. Size:100K sanyo
2sc5297.pdf 
Ordering number:ENN5291NPN Triple Diffused Planar Silicon Transistor2SC5297Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5297] Adoption of MBIT process.16.05.63.43.12.82.0
8.3. Size:95K sanyo
2sc5298.pdf 
Ordering number:EN5292NPN Triple Diffused Planar Silicon Transistor2SC5298Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5298] Adoption of MBIT process.16.05.63.4 On-chip da
8.4. Size:99K sanyo
2sc5296.pdf 
Ordering number:ENN5290ANPN Triple Diffused Planar Silicon Transistor2SC5296Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed : tf=100ns typ.unit:mm High breakdown voltage : VCBO=1500V.2039D High reliability (Adoption of HVP process).[2SC5296] Adoption of MBIT process.16.05.63.4 On-chip
8.5. Size:43K panasonic
2sc5295.pdf 
Transistors2SC5295Silicon NPN epitaxial planer typeUnit: mmFor 2 GHz band low-noise amplification0.2+0.1 0.15+0.10.05 0.053 Features High transition frequency fT Low collector output capacitance Cob SS-mini type package, allowing downsizing of the equipment and 1 2(0.5) (0.5)automatic insertion through the tape packing.1.00.11.60.15 Absolut
8.6. Size:37K panasonic
2sc5294.pdf 
Power Transistors2SC5294, 2SC5294ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (Ta=
8.7. Size:78K jmnic
2sc5299.pdf 
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC5299 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso
8.8. Size:74K jmnic
2sc5297.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5297 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abs
8.9. Size:205K jmnic
2sc5296.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Em
8.10. Size:176K cn sptech
2sc5299.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-
8.11. Size:214K inchange semiconductor
2sc5299.pdf 
isc Silicon NPN Power Transistor 2SC5299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
8.12. Size:221K inchange semiconductor
2sc5297.pdf 
isc Silicon NPN Power Transistor 2SC5297DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
8.13. Size:220K inchange semiconductor
2sc5296.pdf 
isc Silicon NPN Power Transistor 2SC5296DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applicaitionsABSOLUTE MAXIMUM RATINGS(T =
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