Биполярный транзистор 2SC5300 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5300
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 4
Корпус транзистора: TO-3PML
2SC5300 Datasheet (PDF)
2sc5300.pdf
Ordering number:EN5416ANPN Triple Diffused Planar Silicon Transistor2SC5300Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC5300] Adoption of MBIT process.16.05.63.43.12.82
2sc5303.pdf
Ordering number:ENN6177NPN Triple Diffused Planar Silicon Transistor2SC5303Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5303] Adoption of MBIT process.20.0 5.01.751.02.91.2
2sc5304ls.pdf
Ordering number:ENN5883ANPN Triple Diffused Planar Silicon Transistor2SC5304LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5304]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55
2sc5301.pdf
Ordering number:EN5417ANPN Triple Diffused Planar Silicon Transistor2SC5301Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5301] Adoption of MBIT process.20.0 5.01.751.02.91
2sc5304.pdf
Ordering number:EN5883NPN Triple Diffused Planar Silicon Transistor2SC5304Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5304]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI
2sc5302.pdf
Ordering number:EN5363BNPN Triple Diffused Planar Silicon Transistor2SC5302Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC5302] Adoption of MBIT process.16.05.63.43.12.82.0
2sc5305ls.pdf
Ordering number:ENN5884ANPN Triple Diffused Planar Silicon Transistor2SC5305LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5305]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55
2sc5305.pdf
Ordering number:EN5884NPN Triple Diffused Planar Silicon Transistor2SC5305Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5305]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI
2sc5305.pdf
UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1* Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1: Base 2: Colle
2sc5307.pdf
SMD Type TransistorsNPN Transistors2SC5307SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking : AL0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit
2sc5302.pdf
isc Silicon NPN Power Transistor 2SC5302DESCRIPTIONHigh Breakdown Voltage:V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V
2sc5305.pdf
isc Silicon NPN Power Transistor 2SC5305DESCRIPTIONHigh Breakdown Voltage:V = 1200V (Min)(BR)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collect
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050