Биполярный транзистор 2SC5336 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5336
Маркировка: RE_RF_RH
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 6500 MHz
Ёмкость коллекторного перехода (Cc): 0.5 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: MINI-MOLD
2SC5336 Datasheet (PDF)
2sc5336.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5336NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5336 25 pcs (Non reel) Magazine
2sc5336.pdf
SMD Type TransistorsNPN Transistors2SC5336SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter -
2sc5339.pdf
2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo
2sc5338.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5338NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75 4-pin power minimold package with improved gain
2sc5337.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5337NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noiseNF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHzNF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package wi
2sc5335 e.pdf
Transistor2SC5335(Tentative)Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Uni
2sc5335.pdf
Transistor2SC5335(Tentative)Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Uni
2sc5339.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC5339 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 sim
2sc5333.pdf
2SC5333Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5333 Symbol Conditions 2SC5333 UnitUnit 0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300V 1.0max mAVVCEO 300 IEBO VEB=6V 1.0max mAVVEBO 6 V(B
2sc5338.pdf
SMD Type TransistorsNPN Transistors2SC5338SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter -
2sc5337.pdf
SMD Type TransistorsNPN Transistors2SC5337SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=250mA Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter -
2sc5339.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5339DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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