2N1208-1 - описание и поиск аналогов

HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oC HGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

March 2005 HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description 13A, 1200V, TC = 25 C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150 C the best features of MOSF

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oC The HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC members

HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oC The HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC members o

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oC HGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra f

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra f

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGV12N120D/D Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra fast rectifier and uses an adva

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120/D Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 12 A @ 90 C voltage blocking

STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W 1 1 1 Industry s lowest RDS(on) x area 3 3 2 1 2 Industry s best figure of merit (FoM) 1 TO-220FP Ultra

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in H PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2PAK-2 H TO-220 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m

STB12N120K5, STFW12N120K5 STP12N120K5, STW12N120K5 N-channel 1200 V, 0.58 , 12 A D PAK, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features TAB 1 1 1 RDS(on) Order codes VDSS ID PW 2 max. 3 3 1 2 STB12N120K5 250 W 1 D PAK TO-3PF STFW12N120K5 63 W 1200 V

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in H PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2PAK-2 H TO-220 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in H PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2PAK-2 H TO-220 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m

STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W 1 1 1 Industry s lowest RDS(on) x area 3 3 2 1 2 Industry s best figure of merit (FoM) 1 TO-220FP Ultra

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter - SMPS NPT-Technology offers PG-TO-220-3-1 - very tig

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified accordi

SGW02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits 1s. lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology o

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits 1s. lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology offers

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

SGW02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3-21 Qualified according

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V MMIX1Y82N120C3H1 GenX3TM w/ Diode IC110 = 36A VCE(sat) 3.4V (Electrically Isolated Tab) tfi(typ) = 93ns High-Speed IGBT C for 20-50 kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 VCE(sat) 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (Tab) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 75

1200V XPTTM IGBT VCES = 1200V IXYN82N120C3H1 GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continu

Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120B3 IC110 = 82A IGBTs IXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (TAB) E E VGES Continuous 20 V VGEM Transient

Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120C3H1 IC110 = 58A IGBT w/ Diode VCE(sat) 3.9V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V E

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 VCE(sat) 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (Tab) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 75

1200V XPTTM IGBT VCES = 1200V IXYB82N120C3H1 GenX3TM w/ Diode IC110 = 82A VCE(sat) 3.2V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching PLUS264TM Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V Tab VGES Continuous 20 V VG

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G

Preliminary Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120A3 IC110 = 82A IGBTs IXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V E E VGES Continuous 20 V VGEM Transient 3

Advance Technical Information PolarTM VDSS = 1200V IXTP02N120P ID25 = 0.2A Power MOSFET IXTY02N120P RDS(on) 75 N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings G D D (Tab) S VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V TO-252 (IXTY) VGSS Continuous 20 V VGSM

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G

Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120B3 IC110 = 82A IGBTs IXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (TAB) E E VGES Continuous 20 V VGEM Transient

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

1200V XPTTM IGBT VCES = 1200V IXYH82N120C3 GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient

VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated RDS(on)= 1.4 High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 30 V D (TAB) VGSM Transient 40 V ID25 TC = 25 C12 A IDM TC = 25 C, pulse width limit

IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1

IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1

Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120B3H1 IC110 = 64A IGBT w/ Diode VCE(sat) 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G

Preliminary Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120A3 IC110 = 82A IGBTs IXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V E E VGES Continuous 20 V VGEM Transient 3

Preliminary Data Sheet VCES IC90 VCE(SAT) High Voltage IGBT IXGY 2N120 1200 V 2.0 A 3 V TO-252 AA (IXGY) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 5 A E = Emitter TAB = Collector IC90 TC = 90 C 2 A ICM TC

IXFH12N120P VDSS = 1200V PolarTM Power MOSFET IXFV12N120P ID25 = 12A HiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G DS Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 150 C 1200 V PLUS220SMD (IXFV_S) VDGR TJ = 25 C to 1

SEMICONDUCTOR KGT12N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

WMJ12N120D1 WMX12N120D1 1200V 12A 1.25 N-ch Power MOSFET Description TO-247 TO-3PF TAB WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G D S S Features Typ.R =1.25 @V