Справочник транзисторов. 2N6262

 

Биполярный транзистор 2N6262 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N6262

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 150 W

Макcимально допустимое напряжение коллектор-база (Ucb): 170 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 170 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 200 °C

Граничная частота коэффициента передачи тока (ft): 0.1 MHz

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO3

Аналоги (замена) для 2N6262

 

 

2N6262 Datasheet (PDF)

1.1. 2n6262.pdf Size:11K _semelab

2N6262

2N6262 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 150V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.2. 2n6262.pdf Size:116K _inchange_semiconductor

2N6262
2N6262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximu

 5.1. 2n6264.pdf Size:11K _semelab

2N6262

2N6264 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 150V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

5.2. 2n6263.pdf Size:11K _semelab

2N6262

2N6263 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 120V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

 5.3. 2n6260.pdf Size:11K _semelab

2N6262

2N6260 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 40V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

5.4. 2n6261.pdf Size:18K _semelab

2N6262
2N6262

2N6261 MECHANICAL DATA HOMETAXIAL-BASE Dimensions in mm(inches) MEDIUM POWER SILICON NPN TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES fT = 800 kHz at 0.2A Maximum Safe-area of operation curves for dc and pulse operation. VCEV(sus) = 90V min Low Saturation Voltage: VCE(sat = 1.0V at IC = 0.5A) 1.27 (0.050) 4.83 (0.

 5.5. 2n6260.pdf Size:147K _jmnic

2N6262
2N6262

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6260 DESCRIPTION ·With TO-66 package ·Low saturation voltage ·Wide safe operating area APPLICATIONS ·Power switching circuits ·High-fidelity amplifers ·Solenoid drivers ·Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 s

5.6. 2n6261.pdf Size:134K _jmnic

2N6262
2N6262

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6261 DESCRIPTION ·With TO-66 package ·Low saturation voltage ·Wide safe operating area APPLICATIONS ·Power switching circuits ·Series and shunt-regulator driver and output stages ·High-fidelity amplifers ·Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 s

5.7. 2n6263 2n6264.pdf Size:128K _inchange_semiconductor

2N6262
2N6262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ A wide variety of medium-to-high power, high-voltage applications Ў¤ Series and shunt regulators Ў¤ High-fidelity amplifiers Ў¤ Power switching circuits Ў¤ Solenoid drivers PINNING (See Fig

5.8. 2n6260.pdf Size:125K _inchange_semiconductor

2N6262
2N6262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ Power switching circuits Ў¤ High-fidelity amplifers Ў¤ Solenoid drivers Ў¤ Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N62

5.9. 2n6261.pdf Size:125K _inchange_semiconductor

2N6262
2N6262

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ Power switching circuits Ў¤ Series and shunt-regulator driver and output stages Ў¤ High-fidelity amplifers Ў¤ Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTI

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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