2SC5536 datasheet и подбор замены

 ..1. Size:35K  sanyo
 2sc5536.pdf 

Ordering number ENN6290 NPN Epitaxial Planar Silicon Transistor 2SC5536 VHF Low-Noise Amplifier , OSC Applications Features Package Dimensions Low noise NF=1.8dB typ (f=150MHz). unit mm 2 High gain S21e =16dB typ (f=150MHz). 2159 Ultrasmall, slim flat-lead package. [2SC5536] (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 Base 2 Emitter 3

 0.1. Size:51K  sanyo
 2sc5536a.pdf 

Ordering number ENA1092 2SC5536A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier, 2SC5536A OSC Applications Features Low-noise NF=1.8dB typ (f=150MHz). High gain S21e 2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm). Halogen free compliance. Specifications Absolute Maximum Ra

 0.2. Size:411K  onsemi
 2sc5536a.pdf 

Ordering number ENA1092A 2SC5536A RF Transistor http //onsemi.com 12V, 50mA, fT=1.7GHz, NPN Single SSFP Features Low-noise NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) 2 Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

 8.1. Size:36K  sanyo
 2sc5538.pdf 

Ordering number ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features Package Dimensions 2 High gain S21e =10.5dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2159 Ultrasmall, slim flat-lead package. [2SC5538] (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 Base 2

 8.2. Size:44K  sanyo
 2sc5539.pdf 

Ordering number ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2159 High cutoff frequency fT=7.5GHz typ. [2SC5539] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.

 8.3. Size:32K  sanyo
 2sc5537.pdf 

Ordering number ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Features Package Dimensions Low voltage, low current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2159 NF=2.6dB typ (f=1GHz). [2SC5537] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm)

 8.4. Size:44K  sanyo
 2sc5534.pdf 

Ordering number ENN6258 NPN Epitaxial Planar Silicon Transistor 2SC5534 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=1.2dB typ (f=2GHz). unit mm 2 High gain S21e =10dB typ (f=2GHz). 2161 High cutoff frequency fT=13GHz typ. [2SC5534] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 Emitter 2

 8.5. Size:46K  rohm
 2sc5532.pdf 

2SC5532 Transistors High-voltage Switching Transistor (400V, 5A) 2SC5532 Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A) 2) High switching speed. (tf Max. 1 s at Ic =4A) 3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7

 8.6. Size:51K  rohm
 2sc5531.pdf 

2SC5531 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5531 Features External dimensions (Units mm) 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) 13.1 (IC / IB =1A / 0.2A) 3.2 2) High breakdown voltage. VCEO=400V 3) Fast switching. 8.8 tf 1.0 s ( ) 1 Base ( ) 2 Collector (IC=0.8A) ( ) 3 Emitter 0.5Min. ROHM PSD3 EIAJ SC-83A Structure Three-lay