Биполярный транзистор 2SC5619 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5619
Маркировка: GW
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 4500 MHz
Ёмкость коллекторного перехода (Cc): 1 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SC-59
2SC5619 Datasheet (PDF)
2sc5612.pdf
2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 2000 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 2000 VCollector-Emitter Voltage VCEO 90
2sa2022 2sc5610.pdf
Ordering number:ENN6367PNP/NPN Epitaxial Planar Silicon Transistors2SA2022/2SC5610DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2041AFeatures [2SA2022/2SC5610]4.5 Adoption of MBIT processes.10.02.8 Large current capacitance.3.2 Low collector-to-emitter saturation voltage. High-
2sa2023 2sc5611.pdf
Ordering number:ENN6336PNP/NPN Epitaxial Planar Silicon Transistors2SA2023/2SC561160V / 5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2165 Inverters, converters (strobes, flash, fluorescent lamp[2SA2023/2SC5611]lighting circuit).8.04.0 Power amplifier (high-power car stereo,
2sc5618.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5618NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5618 50 pcs (Non reel) 8 mm wide embosse
2sc5617.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5617NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5617 50 pcs (Non reel) 8 mm w
2sc5614.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5614NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5614 50 pcs (Non reel) 8 mm wide embossed taping2SC5614-T3 10 kpcs
2sc5616 ne688m13.pdf
PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1
2sc5615 ne681m13.pdf
PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1
2sc5615.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5615NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES 1005 package employed (1.0 0.5 0.5 mm) NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5615 50 pcs (Non reel) 8 mm wide embossed taping2SC561
ne856m13 2sc5614.pdf
PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.051.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 LOW NOISE FIGURE:+0.1+0.11.0 0.7
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050