2SC5809 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For high breakdown voltage high-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in Excellent package with withstan

Ordering number ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions High breakdown voltage. unit mm High speed switching. 2045B Wide ASO. [2SC5808] Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Base 2 Collector 1 2 3 3 Emitter 4 Collector

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5801 50 pcs (Non reel) 8 mm wide embossed taping 2SC5801-T3 10 kpcs/re

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) 8 mm

SMALL-SIGNAL TRANSISTOR 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. 0.8 0.2 0.2 Since it is a super-thin flat lead type package,a high-density mounting are possible.

JMnic Product Specification Silicon NPN Power Transistors 2SC5802 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Wide area of safe operation APPLICATIONS For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum rati

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5802 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications.

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications.