Биполярный транзистор 2SC5850
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5850
Маркировка: LB_LC_LD
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: CMPAK
Аналоги (замена) для 2SC5850
2SC5850
Datasheet (PDF)
..1. Size:85K renesas
2sc5850.pdf 
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
8.1. Size:200K toshiba
2sc5859.pdf 
2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmHDTV, DIGITAL TV, PROJECTION TV High Voltage : V = 1700 V CBO Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1700 VCollector-Emi
8.2. Size:199K toshiba
2sc5858.pdf 
2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmHDTV, DIGITAL TV, PROJECTION TV High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 1.5 V (Max) High Speed : tf(2) = 0.1 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1700 VC
8.3. Size:235K toshiba
2sc5856.pdf 
2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmSUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC S
8.4. Size:194K toshiba
2sc5855.pdf 
2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmSUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING
8.5. Size:188K inchange semiconductor
2sc5855.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5855DESCRIPTIONHigh speed switchingHigh voltageLow saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for super high resolutionDisplay color TV digital TVABSOLUTE MAXIMUM RATINGS(T =25)a
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