Биполярный транзистор 2SC5859 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5859
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 210 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 750 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 23 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Ёмкость коллекторного перехода (Cc): 320 pf
Статический коэффициент передачи тока (hfe): 4.5
Корпус транзистора: 2-21F2A
2SC5859 Datasheet (PDF)
2sc5859.pdf
2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmHDTV, DIGITAL TV, PROJECTION TV High Voltage : V = 1700 V CBO Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1700 VCollector-Emi
2sc5858.pdf
2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmHDTV, DIGITAL TV, PROJECTION TV High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 1.5 V (Max) High Speed : tf(2) = 0.1 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1700 VC
2sc5856.pdf
2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmSUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC S
2sc5855.pdf
2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mmSUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING
2sc5850.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5855.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5855DESCRIPTIONHigh speed switchingHigh voltageLow saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for super high resolutionDisplay color TV digital TVABSOLUTE MAXIMUM RATINGS(T =25)a
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
