2SC5868 - параметры, поиск аналогов, даташиты транзистора

2SC5868 Datasheet (PDF)

..1. Size:929K rohm
2sc5868.pdf pdf_icon

Medium power transistor (60V, 0.5A) 2SC5868 Features Dimensions (Unit : mm) 1) High speed switching. TSMT32.8(Tf : Typ. : 80ns at IC = 500mA) 1.62) Low saturation voltage, typically :(Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base(2) Emitter0.3 0.6Each lead has sam

8.1. Size:931K rohm
2sc5865.pdf pdf_icon

High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features Dimensions (Unit : mm) 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) TSMT3 1.0MAX2) Low saturation voltage, typically. 2.90.85:(Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.73) Strong discharge power for inductive load and ( )3capacitance load. 4) Low Noise. 5) Co

8.2. Size:1470K rohm
2sc5866.pdf pdf_icon

2SC5866DatasheetMedium power transistor (60V, 2A)lOutlinelParameter Value TSMT3VCEO60VIC2ASOT-346TSC-96 lFeaturesl1)High speed switching. lInner circuitl (tf:Typ.:35ns at IC=2A)2)Low saturation voltage, typically (Typ.:200mV at IC=1.0A, IB=100mA)3)Storong discharge power for indu

8.3. Size:83K panasonic
2sc5863.pdf pdf_icon

Transistors2SC5863Silicon NPN epitaxial planar typeUnit: mmFor general amplification0.40+0.100.050.16+0.100.063 Features High collector-emitter voltage (Base open) VCEO1 2 High transition frequency fT(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings Ta = 25C10Parameter Symbol Rating UnitCollector-base voltage (Emitter

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .