Справочник транзисторов. 2SC5999

 

Биполярный транзистор 2SC5999 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5999

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 120 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 25 A

Предельная температура PN-перехода (Tj): 150 °C

Ёмкость коллекторного перехода (Cc): 170 pf

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SMP-FD

Аналоги (замена) для 2SC5999

 

 

2SC5999 Datasheet (PDF)

1.1. 2sc5999.pdf Size:37K _sanyo

2SC5999
2SC5999

Ordering number : ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors 2SC5999 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers, inverters. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings

4.1. 2sc5994-td-e.pdf Size:203K _update

2SC5999
2SC5999

Ordering number : EN8035A 2SC5994 Bipolar Transistor http://onsemi.com ( ) 50V, 2A, Low VCE sat , NPN Single PCP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at

4.2. 2sc5994.pdf Size:254K _sanyo

2SC5999
2SC5999

Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor 2SC5994 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25

 4.3. 2sc5998.pdf Size:104K _renesas

2SC5999
2SC5999

2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features High Transition Frequency fT = 11 GHz typ. High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Voltage VCE

4.4. 2sa2140 2sc5993.pdf Size:79K _panasonic

2SC5999
2SC5999

Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit : mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power savi

 4.5. 2sc5993.pdf Size:73K _panasonic

2SC5999
2SC5999

Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm 4.60.2 For power amplification 9.90.3 2.90.2 For TV VM circuit ? 3.20.1 Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) 1.40.2 Full-pack package which can be installed to the heat sink with one 2.60.1 1.60.2 screw. 0.80.1 0.550.15 Absolute M

4.6. 2sc5993.pdf Size:262K _inchange_semiconductor

2SC5999
2SC5999

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5993 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA2140 APPLICATIONS ·Power amplification ·For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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