ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

SMD Type TransistorsPNP Transistors2SA1530ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-150mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Co

Ordering number:ENN2438BPNP/NPN Epitaxial Planar Silicon Transistors2SA1539/2SC3954High-Definition CRT DisplayVideo Output ApplicationsPackage DimensionsApplications High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1539/SC3954]8.0Features4.03.31.0 1.0 High fT : fT=500MHz. High breakdown voltage : VCEO=120Vmin.3.0 Sm

Ordering number:ENN2436CPNP/NPN Epitaxial Planar Silicon Transistors2SA1537/2SC3952High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1537/2SC3952]8.0Features4.03.31.0 1.0 High fT : fT=700MHz. High breakdown voltage : VCEO=70Vmin.3.0 Sma

Ordering number:ENN2437BPNP/NPN Epitaxial Planar Silicon Transistors2SA1538/2SC3953High-Definition CRT DisplayVideo Output ApplicationsPackage DimensionsApplications High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1538/2SC3953]8.0Features4.03.31.0 1.0 High fT : fT=400MHz. High breakdown voltage : VCEO=120Vmin.3.0 S

Ordering number:ENN2435BPNP/NPN Epitaxial Planar Silicon Transistors2SA1536/2SC3951High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1536/2SC3951]8.0Features4.03.31.0 1.0 High fT : fT=600MHz. High breakdown voltage : VCEO=70Vmin.3.0 Sma

Transistor2SA1532Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC39302.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Sym

Transistor2SA1533Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC39395.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base v

Transistor2SA1534, 2SA1534ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC3940 and 2SC3940A5.0 0.2 4.0 0.2Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertionpossible.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Power Transistors2SA1535, 2SA1535ASilicon PNP epitaxial planar typeFor low-frequency driver and high power amplificationUnit: mmComplementary to 2SC3944 and 2SC3944A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.1 0.1High transition frequency fTMakes up a complementary pair w

Transistor2SA1533Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC39395.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base v

Transistor2SA1532Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC39302.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Sym

Transistor2SA1531, 2SA1531ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC3929 and 2SC3929AFeatures2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magaz

Transistor2SA1531, 2SA1531ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC3929 and 2SC3929AFeatures2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magaz

Transistor2SA1534, 2SA1534ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC3940 and 2SC3940A5.0 0.2 4.0 0.2Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertionpossible.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbo

JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION With TO-220Fa package Complement to type 2SC3944/3944A Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS For low-frequency driver and high power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25)

SMD Type TransistorsPNP Transistors2SA1532 Features High transition frequency fT. Complementary to 2SC39301.Base2.Emitter3.Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Po

SMD Type TransistorsPNP Transistors2SA1531A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SC3929A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -55 V Emitter - Base Voltage VEBO -5 Collector Curr

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W

isc Silicon PNP Power Transistors 2SA1535/ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min) -2SA1535(BR)CEO= -180V(Min) -2SA1535AGood Linearity of hFEComplement to Type 2SC3944/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency driver and high power amplifi-cation, is optimum