2SA1749 datasheet и подбор замены

 ..1. Size:128K  sanyo
 2sa1749 2sc4564.pdf 

Ordering number EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 200V min. 2042A High current. [2SA1749/2SC4564] Small reverse transfer capacitance and excellent high frequnecy chacateristics Cre=

 8.1. Size:106K  sanyo
 2sa1745.pdf 

 8.2. Size:102K  sanyo
 2sa1740.pdf 

 8.3. Size:126K  nec
 2sa1742.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE(sat). This transistor is ideal Part No. Package for use as a driver in DC/DC converters and actuators. 2SA1742 Isolated TO-220 In addition, a small resin-molded

 8.4. Size:144K  nec
 2sa1744.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

 8.5. Size:168K  nec
 2sa1741.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

 8.6. Size:130K  nec
 2sa1743.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes

 8.7. Size:39K  panasonic
 2sa1748 e.pdf 

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4562 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute

 8.8. Size:35K  panasonic
 2sa1748.pdf 

Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4562 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute

 8.9. Size:183K  utc
 2sa1740.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

 8.10. Size:538K  jiangsu
 2sa1740.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

 8.11. Size:213K  jmnic
 2sa1741.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

 8.12. Size:183K  jmnic
 2sa1746.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1746 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER COND

 8.13. Size:28K  sanken-ele
 2sa1746.pdf 

 8.14. Size:184K  lge
 2sa1740.pdf 

2SA1740 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 4.6 B 4.4 1.6 1 1.8 1.4 1.4 3. EMITTER 2 2.6 4.25 3 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 High breadown voltage 0.44 2x) 0.13 B 0.35 0.37 1.5 Excellent hFE linearlity 3.0 Dimensions in inches and (millimeters) Marking AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

 8.15. Size:1075K  kexin
 2sa1745.pdf 

SMD Type Transistors PNP Transistors 2SA1745 Features Low collector-to-emitter saturation voltage. Complementary to 2SC4555 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5

 8.16. Size:836K  kexin
 2sa1748.pdf 

SMD Type Transistors PNP Transistors 2SA1748 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SC4562. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collect

 8.17. Size:854K  kexin
 2sa1740.pdf 

SMD Type Transistors PNP Transistors 2SA1740 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC4548 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

 8.18. Size:1282K  cn sps
 2sa1746t5tl.pdf 

2SA1746T5TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-Emitter Voltage -50 V CEO V Emi

 8.19. Size:1291K  cn sps
 2sa1744t2tl.pdf 

2SA1744T2TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and features a high h at low V ,which

 8.20. Size:306K  cn sptech
 2sa1742m 2sa1742l 2sa1742k.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1742 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and feat

 8.21. Size:519K  cn sptech
 2sa1746.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1746 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E

 8.22. Size:174K  cn sptech
 2sa1744m 2sa1744l 2sa1744k.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and f

 8.23. Size:196K  inchange semiconductor
 2sa1742.pdf 

isc Silicon PNP Power Transistor 2SA1742 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power trans

 8.24. Size:214K  inchange semiconductor
 2sa1744.pdf 

isc Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t

 8.25. Size:214K  inchange semiconductor
 2sa1741.pdf 

isc Silicon PNP Power Transistor 2SA1741 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power

 8.26. Size:219K  inchange semiconductor
 2sa1746.pdf 

isc Silicon PNP Power Transistor 2SA1746 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN