Биполярный транзистор 2SA1759 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1759
Маркировка: AH
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 12 MHz
Ёмкость коллекторного перехода (Cc): 13 pf
Статический коэффициент передачи тока (hfe): 82
Корпус транзистора: MPT3
2SA1759 Datasheet (PDF)
2sa1759 2sc4505 2sc4620.pdf
2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305
2sa1759.pdf
2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT32) Low saturation voltage, 4.51.5typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.63) High switching speed, typically tf = 1s at Ic =100mA. 4) Wide SOA
2sa1759.pdf
SMD Type TransistorsPNP Transistors2SA1759SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC45050.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll
2sa1758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sa1757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -1
2sa1758d 2sa1758e 2sa1758f.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sa1758.pdf
isc Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching
2sa1757.pdf
isc Silicon PNP Power Transistor 2SA1757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicat
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: DTS424 | 2SB978 | CMBT200A | 2N2694 | DTA143ECALT1 | DWA407 | KT814A
History: DTS424 | 2SB978 | CMBT200A | 2N2694 | DTA143ECALT1 | DWA407 | KT814A
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050