Биполярный транзистор 2SA1766 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1766
Маркировка: AL
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 12 pf
Статический коэффициент передачи тока (hfe): 500
Корпус транзистора: PCP
2SA1766 Datasheet (PDF)
2sa1766.pdf
Ordering number:EN3182BPNP Epitaxial Planar Silicon Transistor2SA1766High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High DC current gain (hFE=500 to 1200).2038 Large current capacity.[2SA1766] Low collector-to-emitter saturation voltage. High VEBO.E : EmitterC : Collec
2sa1766.pdf
SMD Type TransistorsPNP Transistors2SA17661.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity.0.42 0.10.46 0.1 Low collector-to-emitter saturation voltage. High VEBO.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base
2sa1768.pdf
Ordering number:ENN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064AFeatures [2SA1768/2SC4612]2.5 Adoption of MBIT process.1.45 High breakdown voltage, large current capacity.6.9 1.0 Fast switching speed.0.60.9 0.51
2sa1764.pdf
Ordering number:EN3180BPNP Epitaxial Planar Silicon Transistor2SA1764High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2018A High gain-bandwidth product.[2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-appliedsets to be made small and slim. Comp
2sa1765.pdf
Ordering number:EN3181APNP Epitaxial Planar Silicon Transistor2SA1765High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2033 High gain-bandwidth product.[2SA1765] Small collector capacitance. Complementary pair with the 2SC4454.B : BaseC : CollectorE : EmitterSANYO : SPASpeci
2sa1763.pdf
Ordering number:EN3179APNP Epitaxial Planar Silicon Transistor2SA1763High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2059 High gain-bandwidth product.[2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763-applied sets to be made small and slim.
2sa1768s-an 2sa1768t-an.pdf
Ordering number : EN3582A2SA1768Bipolar Transistorhttp://onsemi.com ( )180V, 160A, Low VCE sat PNP Single NMPApplicaitons Color TV sound output, converter, inverterFeatures Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings
2sa1767 e.pdf
Transistor2SA1767Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC1473A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitt
2sa1762.pdf
Transistor2SA1762Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC46066.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol
2sa1762 e.pdf
Transistor2SA1762Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC46066.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol
2sa1767.pdf
Transistor2SA1767Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC1473A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitt
2sa1764.pdf
SMD Type TransistorsPNP Transistors2SA1764SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-200mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS