145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N62902N6290 NPN PLASTIC POWER TRANSISTORComplementary 2N6109Medium Power Switching and Linear ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.40

isc Silicon NPN Power Transistor 2N6290DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Complement to Type 2N6109Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYM

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

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2N6299SMD 2N6299SMD052N6301SMD 2N6301SMD05MECHANICAL DATADimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR2N6301SMD - NPN TRANSISTOR Designed for general

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS 2N6107 PNP2N6292 NPNTO-220Plastic PackageGeneral Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VCollector Emitter Voltage VCEO 70 VCollector Emitter Voltage (RBE= 100

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute maximum rating

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outlin

Product Specification www.jmnic.comSilicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION1 Base C

PNP Darlington Power Silicon Transistor2N6298 & 2N6299Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N6298 2N6299 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 60 80 VdcEmitter - Base Voltage VEBO 5.0 VdcBase Current IB 120 mAdcCollector Current IC 8.0 AdcTot

isc Product Specificationisc Silicon NPN Power Transistor 2N6292DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)Complement to Type 2N6107APPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

isc Silicon NPN Power Transistor 2N6293DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximu

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximu

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION1

isc Silicon NPN Power Transistor 2N6291DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA