2SB1722J. Аналоги и основные параметры
Наименование производителя: 2SB1722J
Маркировка: 4R
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SC-89
Аналоги (замена) для 2SB1722J
- подборⓘ биполярного транзистора по параметрам
2SB1722J даташит
9.1. Size:107K rohm
2sb1733.pdf 
2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) max. -350mV at Ic = -500mA / IB = -25mA ROHM TUMT3 Abbreviated symbol EW (1) Base (2) Emitter (3) Collector Packaging specification
9.2. Size:118K rohm
2sb1714.pdf 
2SB1714 Transistors -2A / -30V Bipolar transistor 2SB1714 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) -370mV, at IC = -1.5A, IB = -75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XY PNP epitaxial planar silicon tra
9.3. Size:66K rohm
2sb1707.pdf 
2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector
9.4. Size:102K rohm
2sb1709.pdf 
2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Ea
9.5. Size:105K rohm
2sb1731.pdf 
2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM TUMT3 Abbreviated symbol FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un
9.6. Size:98K rohm
2sb1713.pdf 
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XW PNP epitaxial planar silicon transistor
9.7. Size:66K rohm
2sb1705.pdf 
2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equival
9.8. Size:60K rohm
2sb1706.pdf 
2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) -370mV 0.95 0.95 0.16 At lc= -1.5A / lB= -75mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolu
9.9. Size:1026K rohm
2sb1708.pdf 
2SB1708 Datasheet General purpose amplification(-30V,-3A) lOutline l SOT-346T Parameter Value SC-96 VCEO -30V IC -3A TSMT3 lFeatures lInner circuit l l 1) Collector current is large.(3A) 2) VCE(sat) -250mV at IC= -1.5A / IB= -30mA . lApplication l LOW FREQUENCY AMPLIFIER lPackaging specifications l Package Taping Reel si
9.10. Size:70K rohm
2sb1730.pdf 
2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM TUMT3 Abbreviated symbol FV (1) Base Packaging specifications (2) Emitter (3) Collector Packag
9.11. Size:105K rohm
2sb1732.pdf 
2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM TUMT3 Abbreviated symbol EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications
9.12. Size:104K rohm
2sb1710.pdf 
2SB1710 Transistors General purpose amplification (-30V, -1A) 2SB1710 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. 2) Collector saturation voltage is low. ( ) ( ) 1 2 0.95 0.95 VCE(sat) -350mV 0.16 1.9 (1) Base at Ic = -500mA / IB = -25mA (2) E
9.13. Size:54K panasonic
2sb1734.pdf 
Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.9 0.1 Absolute Maximum Ratings Ta =
Другие транзисторы: 2SB1713, FJAF6810A_J6810A, 2SC5936, 2SC5248, 2SC5615, 2SC5694, 2SC6093LS, 2SB1714, S8050, 2SB1734, 2SB792A, 2SB910M, 2SD1341P, 2SD1381F, 2SD1536M, 2SD1775, 2SD1775A
