Биполярный транзистор 2SD2261 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2261
Маркировка: DR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 2000
Корпус транзистора: PCP
2SD2261 Datasheet (PDF)
2sd2261.pdf
Ordering number:ENN5311ANPN Epitaxial Planar Silicon Transistor2SD2261Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2038AFeatures [2SD2261]4.5 Darlington connection.1.51.6 High DC current gain. DC current gain is less affected by temperature. Small-sized package.0.4 0.53 2 10.41.
2sd2261.pdf
SMD Type TransistorsNPN Transistors2SD2261SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2.5A Collector Emitter Voltage VCEO=60VC0.42 0.10.46 0.1B1.Base2.Collector7k 5003.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emit
2sd2260 e.pdf
Transistor2SD2260Silicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh collector breakdown voltage.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings
2sd2266.pdf
Power Transistors2SD2266Silicon NPN triple diffusion planar typeFor power switchingUnit: mm5.0 0.1Features 10.0 0.2 1.0High-speed switching90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Parameter Symbol Ratings Unit
2sd2263.pdf
2SD2263Silicon NPN EpitaxialApplicationLow frequency power amplifierFeatures Build in zener diode for surge absorb. Suitable for relay drive with small power loss.OutlineTO-92 (1)2ID31. Emitter2. Collector3. Base13212SD2263Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter volt
2sd226.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050