Transistor2SD2359Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.5 0.081.5 0.13.0

Transistor2SD2359Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.5 0.081.5 0.13.0

SMD Type TransistorsNPN Transistors2SD23591.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB15390.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Col

2SD2351DatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-323 Parameter Value SC-70 VCEO50VIC150mAUMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA)lApplicationlLOW FREQUENCY AMPLIFIERlPack

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

Transistor2SD2357Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB15371.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.

Transistors2SD2358Silicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency output amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1538 Features0.65 max. Low collector to emitter saturation voltage VCE(sat):

Transistor2SD2357Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB15371.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.

2SD235 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB435ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 25 W Junction

2SD2353(BR3DA2353F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,V CESATHigh DC current gain ,low collector saturation voltage. / Applications For power amplification. / E

SMD Type TransistorsNPN Transistors2SD23571.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Complementary to 2SB15370.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCE

isc Silicon NPN Power Transistor 2SD235DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB435Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI