2SD2359. Аналоги и основные параметры
Наименование производителя: 2SD2359
Маркировка: 1O
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 23 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SC-62
Аналоги (замена) для 2SD2359
- подборⓘ биполярного транзистора по параметрам
2SD2359 даташит
..1. Size:39K panasonic
2sd2359 e.pdf 
Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0
..2. Size:35K panasonic
2sd2359.pdf 
Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0
..3. Size:822K kexin
2sd2359.pdf 
SMD Type Transistors NPN Transistors 2SD2359 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1539 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Col
8.3. Size:1225K rohm
2sd2351.pdf 
2SD2351 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-323 Parameter Value SC-70 VCEO 50V IC 150mA UMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) lApplication l LOW FREQUENCY AMPLIFIER lPack
8.4. Size:85K rohm
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf 
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base
8.5. Size:39K panasonic
2sd2357 e.pdf 
Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.
8.6. Size:45K panasonic
2sd2358.pdf 
Transistors 2SD2358 Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency output amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1538 Features 0.65 max. Low collector to emitter saturation voltage VCE(sat)
8.7. Size:36K panasonic
2sd2357.pdf 
Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.
8.8. Size:69K wingshing
2sd235.pdf 
2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 25 W Junction
8.9. Size:426K blue-rocket-elect
2sd2353.pdf 
2SD2353(BR3DA2353F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,V CESAT High DC current gain ,low collector saturation voltage. / Applications For power amplification. / E
8.10. Size:823K kexin
2sd2357.pdf 
SMD Type Transistors NPN Transistors 2SD2357 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Complementary to 2SB1537 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCE
8.11. Size:213K inchange semiconductor
2sd235.pdf 
isc Silicon NPN Power Transistor 2SD235 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI
Другие транзисторы: 2SD2282, 2SD2284, 2SD2285, 2SD2321, 2SD2324, 2SD2345, 2SD2357, 2SD2358, 13005, 2SD2375, 2SD2382, 2SD2383, 2SD2396, 2SD2403, 2SD2414, 2SD2416, 2SD2420
