2SD2423 - описание и поиск аналогов

2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 2 k 0.5 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD2423 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50

SMD Type Transistors NPN Transistors 2SD2423 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 2.Collector (Typ) (Typ) E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

Ordering number EN4716 NPN Epitaxial Planar Silicon Transistor 2SD2426 80V/2A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2084B [2SD2426] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Darlington connection. High DC current gain. 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector

DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES New package with dimensions in between those of small signal and powe

Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE 2 000 to 10 000 Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol Rati

SMD Type Transistors NPN Transistors 2SD2425 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60V Complementary to 2SB1578 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V

isc Silicon NPN Darlington Power Transistor 2SD2422 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch