Биполярный транзистор 2SD2457 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2457
Маркировка: 1Y
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 45 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SC-62
2SD2457 Datasheet (PDF)
2sd2457.pdf
Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
2sd2457 e.pdf
Transistor2SD2457Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
2sd2457.pdf
SMD Type TransistorsNPN Transistors2SD24571.70 0.1 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Complementary to 2SB15990.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 V Emitt
2sd2459.pdf
Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4
2sd2459 e.pdf
Transistor2SD2459Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing. 0.4
2sd2453.pdf
Power Transistors2SD2453Silicon NPN triple diffusion planar typeUnit: mm6.50.1For high current transfer ratio and power amplification2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)1.00.10.10.050.50.10.750.1 Absolute Maximum Ratings Ta = 25C2.30.1(5
2sd2459.pdf
SMD Type TransistorsNPN Transistors2SD2459SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage V
2sd2454.pdf
isc Silicon NPN Power Transistor 2SD2454DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050