Power Transistors2SD2556Silicon NPN epitaxial planer typeUnit: mm6.50.1For power switching2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Allowing supply with the radial taping1.00.1 Low collector to emitter saturation voltage VCE(sat):

2SD2551 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2551 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5.0 V (Max.) CE (sat) High Speed : t = 1.0 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBO

2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5.0 V (Max.) CE (sat) High Speed : t = 0.6 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMB

2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mol

2SD2559 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2559 Horizontal Deflection Output for Color TV Unit: mm High voltage: VCBO = 1500 V Low saturation voltage: V = 5 V (max) CE (sat) Bult-in damper type Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-

CEquivalent circuitBDarlington 2SD2558(70)ESilicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2558 Unit Symbol Conditions 2SD2558Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 100max AI

Equivalent circuit CBDarlington 2SD2557(3.2k)(450)ESilicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25C)Symbol 2SD2557 Unit Symbol Conditions 2SD2557 Unit0.24.80.415.60.1VCBO 200 V ICBO VCB=200V 100max A

isc Silicon NPN Power Transistor 2SD2551DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2550DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2553DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV applicationsHigh speed switching applicat

isc Silicon NPN Darlington Power Transistor 2SD2558DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current Gain-: h = 1500( Min.) @(I = 1A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 1A, I = 5mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

isc Silicon NPN Power Transistor 2SD2559DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Darlington Power Transistor 2SD2557DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 1A, V = 5VFE C CECollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for series regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =2