Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automat

Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automat

2SD2568TransistorsPower Transistor(400V,0.5A)2SD2568 Features1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 7 VCollector current IC 0.5 A10Collector power dissipation PC W(Tc=25C)Junction temperature Tj150 CSt

Equivalent circuit CBDarlington 2SD2561(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200SymbolSymbol 2SD2561 Unit Conditions 2SD2561 Unit0.26.00.336.4ICBOVCBO 150 V VCB=150

Equivalent circuit CBDarlington 2SD2562(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)(Ta=25C)Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit0.20.2 5.515.6VCBO 150 V ICBO VCB

Equivalent circuit CBDarlington 2SD2560(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2560 Unit Symbol Conditions 2SD2560Unit0.24.80.415.6VCBO 150 V ICBO VC

isc Silicon NPN Darlington Power Transistor 2SD2561DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1648Minimum Lot-to-Lot variations for robust deviceperformance and reliable

isc Silicon NPN Darlington Power Transistor 2SD2562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1649Minimum Lot-to-Lot variations for robust deviceperformance and reliable

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD256DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR) CEOCollector Power Dissipation-: P = 25W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

isc Silicon NPN Darlington Power Transistor 2SD2560DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1647Minimum Lot-to-Lot variations for robust deviceperformance and reliable