Биполярный транзистор 2SD2621 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2621
Маркировка: 3B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 400
Корпус транзистора: SSSMINI3-F1
2SD2621 Datasheet (PDF)
2sd2621.pdf
Transistors2SD2621Silicon NPN epitaxial planar typeFor low-frequency driver amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.023 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta
2sd2627.pdf
Ordering number : ENN64782SD2627NPN Triple Diffused Planar Silicon Transistor2SD2627Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20
2sd2624.pdf
Ordering number : ENN6500A2SD2624NPN Triple Diffused Planar Silicon Transistor2SD2624Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2624] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.
2sd2629.pdf
Ordering number:ENN6352NPN Triple Diffused Planar Silicon Transistor2SD2629Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2079C High reliability (Adoption of HVP process).[2SD2629] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20.70.75
2sd2627ls.pdf
Ordering number : ENN6478A2SD2627LSNPN Triple Diffused Planar Silicon Transistor2SD2627LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.91.
2sd2620.pdf
Transistors2SD2620JSilicon NPN epitaxial planer typeUnit: mmFor low-frequency amplification1.60+0.050.030.12+0.030.011.000.053 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)1 2 High emitter to base voltage VBEO 0.270.02(0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2
2sd2623.pdf
Transistors2SD2623Silicon NPN epitaxial planar typeFor low-frequency amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.1 2(0.65) (0.65) Absolute Maximum Ratings Ta = 25C1.30.1Parameter Symbol Rating Unit2
2sd2625z9 br3dd2625z9p.pdf
2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2625v9 br3dd2625v9p.pdf
2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2625x9 br3dd2625x9p.pdf
2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050