NESG3031M05 - параметры, поиск аналогов, даташиты транзистора

NESG3031M05 Datasheet (PDF)

..1. Size:207K nec
nesg3031m05.pdf pdf_icon

NPN SILICON GERMANIUM RF TRANSISTORNESG3031M05NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA,

5.1. Size:207K nec
nesg3031m14.pdf pdf_icon

NPN SILICON GERMANIUM RF TRANSISTORNESG3031M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

7.1. Size:261K nec
nesg3032m14.pdf pdf_icon

NPN SILICON GERMANIUM RF TRANSISTORNESG3032M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

7.2. Size:275K nec
nesg3033m14.pdf pdf_icon

NPN SILICON GERMANIUM RF TRANSISTORNESG3033M14NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz SiG

Другие транзисторы... CBSL100 , NESG2101M05 , NESG2101M16 , NESG210719 , NESG2107M33 , NESG250134 , NESG260234 , NESG270034 , BD135 , NESG3031M14 , NESG3032M14 , NESG3033M14 , NESG4030M14 , NESG2046M33 , NESG204619 , NESG2031M16 , NESG2031M05 .