2N4910X2N4911X2N4912XMECHANICAL DATANPN EPITAXIALDimensions in mm (inches)POWER TRANSISTOR IN TO66 HERMETIC PACKAGE6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONS SCREENING OPTIONS AVAILABE1 2 TO66 PACKAGE1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Metal Package.PIN 1 =

2N4911XSMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N4911XSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=