Справочник транзисторов. FJN4304R

 

Биполярный транзистор FJN4304R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: FJN4304R
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 5.5 pf
   Статический коэффициент передачи тока (hfe): 68
   Корпус транзистора: TO-92

 Аналоги (замена) для FJN4304R

 

 

FJN4304R Datasheet (PDF)

 ..1. Size:65K  fairchild semi
fjn4304r.pdf

FJN4304R
FJN4304R

FJN4304RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJN3304RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.1. Size:36K  fairchild semi
fjn4302r.pdf

FJN4304R
FJN4304R

FJN4302RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJN3302RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.2. Size:69K  fairchild semi
fjn4305r.pdf

FJN4304R
FJN4304R

FJN4305RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJN3305RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCV

 8.3. Size:36K  fairchild semi
fjn4303r.pdf

FJN4304R
FJN4304R

FJN4303RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJN3303RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.4. Size:70K  fairchild semi
fjn4306r.pdf

FJN4304R
FJN4304R

FJN4306RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJN3306RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.5. Size:36K  fairchild semi
fjn4308r.pdf

FJN4304R
FJN4304R

FJN4308RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJN3308RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.6. Size:37K  fairchild semi
fjn4307r.pdf

FJN4304R
FJN4304R

FJN4307RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJN3307RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVC

 8.7. Size:32K  fairchild semi
fjn4309r.pdf

FJN4304R
FJN4304R

FJN4309RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJN3309RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVCBO Collector

 8.8. Size:68K  fairchild semi
fjn4301r.pdf

FJN4304R
FJN4304R

FJN4301RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJN3301RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC

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