Биполярный транзистор FJX3003R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: FJX3003R
Маркировка: S03
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 3.7 pf
Статический коэффициент передачи тока (hfe): 56
Корпус транзистора: SOT-323
FJX3003R Datasheet (PDF)
fjx3003r.pdf
FJX3003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX4003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S03BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjx3002r.pdf
FJX3002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX4002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S02BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjx3009r.pdf
FJX3009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX4009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS09RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame
fjx3007r.pdf
FJX3007RSwitching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX4007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S07BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjx3004r.pdf
FJX3004R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K, R2=47K) Complement to FJX4004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S04BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
fjx3001r.pdf
FJX3001RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX4001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S01BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no
fjx3006r.pdf
FJX3006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX4006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S06BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx3008r.pdf
FJX3008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX4008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S08BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
fjx3005r.pdf
FJX3005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX4005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S05BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2DI100D-050 | BC130B
History: 2DI100D-050 | BC130B
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050