Справочник транзисторов. FJX3006R

 

Биполярный транзистор FJX3006R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: FJX3006R
   Маркировка: S06
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.21
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Ёмкость коллекторного перехода (Cc): 3.7 pf
   Статический коэффициент передачи тока (hfe): 68
   Корпус транзистора: SOT-323

 Аналоги (замена) для FJX3006R

 

 

FJX3006R Datasheet (PDF)

 ..1. Size:43K  fairchild semi
fjx3006r.pdf

FJX3006R
FJX3006R

FJX3006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX4006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S06BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.1. Size:43K  fairchild semi
fjx3002r.pdf

FJX3006R
FJX3006R

FJX3002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX4002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S02BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.2. Size:39K  fairchild semi
fjx3009r.pdf

FJX3006R
FJX3006R

FJX3009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX4009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS09RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

 8.3. Size:43K  fairchild semi
fjx3007r.pdf

FJX3006R
FJX3006R

FJX3007RSwitching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX4007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S07BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.4. Size:41K  fairchild semi
fjx3004r.pdf

FJX3006R
FJX3006R

FJX3004R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K, R2=47K) Complement to FJX4004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S04BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.5. Size:43K  fairchild semi
fjx3003r.pdf

FJX3006R
FJX3006R

FJX3003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX4003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S03BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.6. Size:42K  fairchild semi
fjx3001r.pdf

FJX3006R
FJX3006R

FJX3001RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX4001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S01BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no

 8.7. Size:42K  fairchild semi
fjx3008r.pdf

FJX3006R
FJX3006R

FJX3008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX4008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S08BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.8. Size:42K  fairchild semi
fjx3005r.pdf

FJX3006R
FJX3006R

FJX3005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX4005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S05BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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