Справочник транзисторов. FJX4001R

 

Биполярный транзистор FJX4001R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: FJX4001R
   Маркировка: S51
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 5.5 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: SOT-323

 Аналоги (замена) для FJX4001R

 

 

FJX4001R Datasheet (PDF)

 ..1. Size:42K  fairchild semi
fjx4001r.pdf

FJX4001R
FJX4001R

FJX4001R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX3001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS51R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no

 8.1. Size:43K  fairchild semi
fjx4005r.pdf

FJX4001R
FJX4001R

FJX4005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX3005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S55BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise not

 8.2. Size:42K  fairchild semi
fjx4004r.pdf

FJX4001R
FJX4001R

FJX4004RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJX3004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS54R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.3. Size:43K  fairchild semi
fjx4007r.pdf

FJX4001R
FJX4001R

FJX4007RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX3007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S57BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.4. Size:42K  fairchild semi
fjx4008r.pdf

FJX4001R
FJX4001R

FJX4008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX3008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS58R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.5. Size:42K  fairchild semi
fjx4002r.pdf

FJX4001R
FJX4001R

FJX4002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX3002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS52R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.6. Size:43K  fairchild semi
fjx4003r.pdf

FJX4001R
FJX4001R

FJX4003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX3003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS53R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.7. Size:43K  fairchild semi
fjx4006r.pdf

FJX4001R
FJX4001R

FJX4006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX3006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S56BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.8. Size:39K  fairchild semi
fjx4009r.pdf

FJX4001R
FJX4001R

FJX4009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX3009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS59RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

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