Биполярный транзистор FJX4002R
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: FJX4002R
Маркировка: S52
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Ёмкость коллекторного перехода (Cc): 5.5
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
SOT-323
Аналоги (замена) для FJX4002R
FJX4002R
Datasheet (PDF)
..1. Size:42K fairchild semi
fjx4002r.pdf 
FJX4002RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJX3002R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS52R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.1. Size:43K fairchild semi
fjx4005r.pdf 
FJX4005RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJX3005R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S55BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise not
8.2. Size:42K fairchild semi
fjx4004r.pdf 
FJX4004RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJX3004R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS54R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.3. Size:43K fairchild semi
fjx4007r.pdf 
FJX4007RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJX3007R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S57BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.4. Size:42K fairchild semi
fjx4001r.pdf 
FJX4001R3Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJX3001R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS51R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no
8.5. Size:42K fairchild semi
fjx4008r.pdf 
FJX4008RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJX3008R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS58R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.6. Size:43K fairchild semi
fjx4003r.pdf 
FJX4003RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJX3003R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS53R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.7. Size:43K fairchild semi
fjx4006r.pdf 
FJX4006RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJX3006R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S56BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.8. Size:39K fairchild semi
fjx4009r.pdf 
FJX4009RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K) Complement to FJX3009R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS59RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame
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