TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 77.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVE

TN6727AC TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units40 VVCES Collector-Emitter Voltage50 VVCBO Collector-Base V

Discrete Power & Signal Technologies TN6725AC TO-226 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units50 VVCES Collector-Emitter Voltage

TN6728ANZT6728CEECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 78.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 60 V

TN6729A NZT6729CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 800mA. Sourced from Process 79.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VV