Order this documentMOTOROLAby 2N6338/DSEMICONDUCTOR TECHNICAL DATAHigh-Power NPN Silicon2N6338Transistors2N6339. . . designed for use in industrialmilitary power amplifier and switching circuit2N6340applications. High CollectorEmitter Sustaining Voltage 2N6341*VCEO(sus) = 100 Vdc (Min) 2N6338VCEO(sus) = 120 Vdc (Min) 2N6339*Motorola Preferred De

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JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436~38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- 2N6338CEO(SUS)= 120V(Min)- 2N6339= 140V(Min)- 2N6340= 160V(Min)- 2N6341High Switching SpeedLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for use in industrial-military power ampli

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr

2N6339ACECCDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe

2N6338, 2N6341High-Power NPN SiliconTransistors. . . designed for use in industrial-military power amplifier andswitching circuit applications. High Collector-Emitter Sustaining Voltage -http://onsemi.comVCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N634125 AMPERE High DC Current Gain -hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS= 12 (Min) @ IC = 25 Adc

2N6338XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

isc Silicon PNP Power Transistor 2N6330DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -8

isc Silicon PNP Power Transistor 2N6331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage