Биполярный транзистор 2N6352 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6352
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO33
2N6352 Datasheet (PDF)
2n6359.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION1 Base 2 Emit
2n6357.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6357 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CON
2n6358.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6358 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CON
2n6354.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION With TO-3 package Excellent safe operating area Fast switching speed Low collector saturation voltage High power dissipation APPLICATIONS For switching applications in military and industrial equipment PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and
2n6355.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6355 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CON
2n6356.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6356 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CON
2n6350-53.pdf
TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level JAN 2N6350 2N6351 2N6352 2N6353 JANTX JANTXV MAXIMUM RATINGS 2N6350 2N6351 Ratings Symbol Units 2N6352 2N6353 Collector-Emitter Voltage 80 150 Vdc VCER Collector-Base Voltage 80 150 Vdc VCBO 12 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current I 0.5
2n6359.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION
2n6357.pdf
isc Silicon NPN Darlington Power Transistor 2N6357DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 4AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow -frequency swithing applications.ABSOLUTE MAX
2n6358.pdf
isc Silicon NPN Darlington Power Transistor 2N6358DESCRIPTIONHigh DC current gain: h = 1500(Min)@ I = 4AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow -frequency swithing applications.ABSOLUTE MA
2n6354.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION With TO-3 package Excellent safe operating area Fast switching speed Low collector saturation voltage High power dissipation APPLICATIONS For switching applications in military and industrial equipment PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified ou
2n6355.pdf
isc Silicon NPN Darlington Power Transistor 2N6355DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 4AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow -frequency swithing applications.ABSOLUTE MAX
2n6356.pdf
isc Silicon NPN Darlington Power Transistor 2N6356DESCRIPTIONHigh DC current gain: h = 1500(Min)@ I = 4AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow -frequency swithing applications.ABSOLUTE MA
Другие транзисторы... 2N6340A , 2N6341 , 2N6341A , 2N6347 , 2N634A , 2N635 , 2N6350 , 2N6351 , A733 , 2N6353 , 2N6354 , 2N6354A , 2N6355 , 2N6356 , 2N6357 , 2N6358 , 2N6359 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050