2N6357 - описание и поиск аналогов

JMnic Product Specification Silicon NPN Power Transistors 2N6357 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON

isc Silicon NPN Darlington Power Transistor 2N6357 DESCRIPTION High DC current gain h = 500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MAX

JMnic Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit

JMnic Product Specification Silicon NPN Power Transistors 2N6358 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON

JMnic Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION With TO-3 package Excellent safe operating area Fast switching speed Low collector saturation voltage High power dissipation APPLICATIONS For switching applications in military and industrial equipment PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and

JMnic Product Specification Silicon NPN Power Transistors 2N6355 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON

JMnic Product Specification Silicon NPN Power Transistors 2N6356 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level JAN 2N6350 2N6351 2N6352 2N6353 JANTX JANTXV MAXIMUM RATINGS 2N6350 2N6351 Ratings Symbol Units 2N6352 2N6353 Collector-Emitter Voltage 80 150 Vdc VCER Collector-Base Voltage 80 150 Vdc VCBO 12 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current I 0.5

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION

isc Silicon NPN Darlington Power Transistor 2N6358 DESCRIPTION High DC current gain h = 1500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION With TO-3 package Excellent safe operating area Fast switching speed Low collector saturation voltage High power dissipation APPLICATIONS For switching applications in military and industrial equipment PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified ou

isc Silicon NPN Darlington Power Transistor 2N6355 DESCRIPTION High DC current gain h = 500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MAX

isc Silicon NPN Darlington Power Transistor 2N6356 DESCRIPTION High DC current gain h = 1500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MA